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Influence of ion doping temperature on the distribution of dopant
Radiation Effects and Defects in Solids ( IF 1 ) Pub Date : 2020-07-29 , DOI: 10.1080/10420150.2020.1799374
E. L. Pankratov 1, 2
Affiliation  

In this paper, we analyze the redistribution of dopant and radiation defects during ion doping of materials at various values of temperature. We obtain that increasing of temperature of ion doping ...

中文翻译:

离子掺杂温度对掺杂剂分布的影响

在本文中,我们分析了在不同温度值下对材料进行离子掺杂期间掺杂剂和辐射缺陷的重新分布。我们得到离子掺杂温度的升高......
更新日期:2020-07-29
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