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Characterisation of a silicon drift detector for high-resolution electron spectroscopy
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment ( IF 1.4 ) Pub Date : 2020-07-29 , DOI: 10.1016/j.nima.2020.164474
Matteo Gugiatti , Matteo Biassoni , Marco Carminati , Oliviero Cremonesi , Carlo Fiorini , Pietro King , Peter Lechner , Susanne Mertens , Lorenzo Pagnanini , Maura Pavan , Stefano Pozzi

Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN (TRitium Investigation on STerile to Active Neutrino mixing) project. This work presents the characterisation of a single-pixel SDD detector with a mono-energetic electron beam obtained from a Scanning Electron Microscope. The suitability of the SDD to detect electrons, in the energy range spanning from few keV to tens of keV, is demonstrated. Experimental measurements reveal a strong effect of the detector’s entrance window structure on the observed energy response. A detailed detector model is therefore necessary to reconstruct the spectrum of an unknown beta-decay source.



中文翻译:

用于高分辨率电子光谱的硅漂移检测器的表征

硅漂移检测器,广泛用于高分辨率和高速率X射线应用中,在这里也被认为对电子检测也很感兴趣。RIS衰变的精确测量是TRISTAN(不育与活性中微子混合的it研究)项目的核心。这项工作介绍了具有从扫描电子显微镜获得的单能电子束的单像素SDD检测器的特性。证明了SDD在几keV到几十keV的能量范围内检测电子的适用性。实验测量结果表明,检测器的入射窗结构对观察到的能量响应具有很强的影响。因此,需要一个详细的检测器模型来重建未知β衰减源的光谱。

更新日期:2020-07-29
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