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Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films
Current Applied Physics ( IF 2.4 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.cap.2020.07.004
Bich Thuy Nguyen , Sung Sik Won , Bong Chan Park , Yong Jin Jo , Chang Won Ahn , Ill Won Kim , Tae Heon Kim

Abstract Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient ( e 31 ∗ ) of 2.43 C/m2.

中文翻译:

Mn掺杂Bi0.5Na0.5TiO3薄膜的横向压电性能

摘要 采用化学溶液沉积法在 Pt/TiO2/SiO2/Si 上制备了无铅 (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) 薄膜基质。研究了 Mn 取代对 BNTMn-x 薄膜的晶体结构、表面形貌、铁电和横向压电性能的影响。0.5 mol% Mn 掺杂的 (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 薄膜在室温下表现出良好饱和的铁电 PE 磁滞回线。在 400 kV/cm 的外加电场下,BNMn-0.0050 薄膜的剩余极化 (Pr) 为 16 μC/cm2。此外,将 1.12 微米厚的 BNTMn-0.0050 薄膜用作悬臂。Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si 单​​晶悬臂梁表现出 2.43 C/m2 的高横向压电系数 (e 31 * )。
更新日期:2020-12-01
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