Searching for two-dimensional (2D) group V materials with ferromagnetism, elastic anisotropy, and carrier mobility and tunable band structure is one key to developing constantly developing nanodevices. The 2D monolayers Sn_xP_y with x/y (1/1, 1/2, 1/3, and so on) coordination number are studied based on the particle-swarm optimization technique combined with the density functional theory optimization. Its thermal stability can be confirmed by molecular dynamics at 70K and 300K, indicating that the novel 2D materials have a stable existence. The electronic band structures of four stable structures suggest that all the monolayers of Sn_xP_y are fully adjustable and flexible tunable band gaps semiconductors under the biaxial strain. The monolayer of P\( \overline{4}{2}_1 \)m-SnP₂ with unique valence band structure can go from nonmagnetic to ferromagnetic by the hole doping because of the “Stoner criterion,” and Pmc2₁-SnP₂ is a direct-like gap semiconductor with in-plane elastic anisotropy to possess a high electron mobility as high as 800 cm²V⁻¹ s⁻¹ along the k_b direction, which is much higher than that of MoS₂ (∼ 200 cm²V⁻¹ s⁻¹). The optical absorption peak of the material is in the ultraviolet region. These discoveries expand the potential applications of the emerging field of 2D Sn_xP_y structures in nanoelectronics.

寻找具有铁磁性、弹性各向异性、载流子迁移率和可调谐能带结构的二维（2D）V族材料是不断发展纳米器件的关键之一。基于粒子群优化技术结合密度泛函理论优化，研究了配位数为x / y （ 1/1、1/2、1/3等）的二维单分子层Sn _x P _{y 。}其在70K和300K下的热稳定性可以通过分子动力学得到证实，表明新型二维材料具有稳定的存在。四种稳定结构的电子能带结构表明，所有单层Sn _x P _y都是双轴应变下完全可调且灵活的可调谐带隙半导体。单层P \( \overline{4}{2}_1 \) m-SnP ₂具有独特的价带结构，由于“斯通纳准则”，可以通过空穴掺杂从非磁性变为铁磁性，并且Pmc2 ₁ -SnP ₂是一种具有面内弹性各向异性的类直接带隙半导体，沿k _b方向具有高达800 cm ² V ^-1  s ^-1的高电子迁移率，远高于MoS ₂ (∼ 200 cm ² V ^-1  s ^-1 )。该材料的光吸收峰位于紫外区。这些发现拓展了二维 Sn _x P _y结构在纳米电子学领域的潜在应用。