In this paper, an analytical solution for a three-level semiconductor quantum dot has been presented. From this solution, we have discussed the effects of the phenomenological damping parameters, the electromagnetic field amplitude \(E_{0}\) of the excitation pulse \(E(\omega )\), and the detuning parameters on the atomic occupation probabilities, the atomic population inversion, the purity, and the information entropy \(H(\sigma _\mathrm{{z}}). \) A long-lived quantum coherence obviously has emerged in all figures. Besides, a decay has appeared in all curves of the atomic occupation probability \(\rho _{gg}(t),\) the atomic population inversion, and the purity. Since there are not sufficient mathematical solutions for such systems, our study may add further insight into many dynamic systems, and this in turn should open up a wide range of applications for semiconductor quantum dot.

本文提出了一种三能级半导体量子点的解析解。从该解决方案中，我们讨论了现象学阻尼参数，激励脉冲的电磁场幅度\（E_ {0} \）\（E（\ omega）\）的影响以及失谐参数对原子占据概率的影响。 ，原子团数反转，纯度和信息熵\（H（\ sigma _ \ mathrm {{z}}）。\）所有图中显然都出现了长寿命的量子相干性。此外，原子占有概率\（\ rho _ {gg}（t），\）的所有曲线都出现了衰减。原子总数反转和纯度。由于此类系统没有足够的数学解决方案，因此我们的研究可能会进一步深入了解许多动态系统，这反过来又应打开半导体量子点的广泛应用。