Abstract

Dielectric relaxation of Debye type has been found for thin vinylidene fluoride‒trifluoroethylene copolymer films of different composition, fabricated by the Langmuir–Blodgett (LB) technique. The influence of γ radiation on the dielectric response of LB films is studied. It is established that the relaxation time increases after the γ irradiation, the phase transition is observed at a lower temperature, and the temperature hysteresis is reduced.

中文翻译：

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γ辐射对铁电Langmuir-Blodgett薄膜介电性能的影响

摘要

对于通过Langmuir-Blodgett（LB）技术制造的不同组成的偏二氟乙烯/三氟乙烯共聚物薄膜，发现了德拜型的介电弛豫。研究了γ辐射对LB薄膜介电响应的影响。可以确定的是，γ辐照后的弛豫时间增加，在较低的温度下观察到相变，并且温度滞后减小。