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Current modulation in graphene p-n junctions with external fields
Journal of Physics: Condensed Matter ( IF 2.7 ) Pub Date : 2020-07-28 , DOI: 10.1088/1361-648x/ab9cf1
F R V Arajo 1, 2 , D R da Costa 1 , A C S Nascimento 3 , J M Pereira Jr 1
Affiliation  

In this work we describe a proposal for a graphene-based nanostructure that modulates electric current even in the absence of a gap in the band structure. The device consists of a graphene p-n junction that acts as a Veselago lens that focuses ballistic electrons on the output lead. Applying external (electric and magnetic) fields changes the position of the output focus, reducing the transmission. Such device can be applied to low power field effect transistors, which can benefit from graphene's high electronic mobility.

中文翻译:

石墨烯 pn 结中的电流调制与外部场

在这项工作中,我们描述了一种基于石墨烯的纳米结构的提议,即使在能带结构中没有间隙的情况下,它也能调节电流。该器件由石墨烯 pn 结组成,充当 Veselago 透镜,将弹道电子聚焦在输出引线上。施加外部(电场和磁场)场会改变输出焦点的位置,从而降低透射率。这种器件可以应用于低功率场效应晶体管,这可以从石墨烯的高电子迁移率中受益。
更新日期:2020-07-28
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