β -Ga 2 O 3 thin films was grown on cost-effective p-Si(100) substrate by sputtering technique. The evolution of crystalline structure with growth parameters revealed that the gallium oxide thin film grown on the high-temperature seed layer and various optimised growth parameters like sputtering power, deposition pressure and pre-substrate annealing has been proved extremely beneficial in exhibiting excellent crystalline quality. However, the direct growth of β -Ga 2 O 3 on Si substrate with seed-layer was found to be amorphous in nature. The discussion about the critical role of varied growth conditions were carried in detail. The photoresponse of the optimized device showed a photoresponsivity of 95.64 AW −1 and a corresponding quantum efficiency of 4.73 × 10 4 % at moderate bias under 250 nm illumination which is higher than most of the devices being reported on planar β -Ga 2 O 3 s...

中文翻译：

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硅基衬底上高温籽晶层辅助β-Ga 2 O 3薄膜的溅射生长，具有成本效益。

通过溅射技术在高性价比的p-Si（100）衬底上生长了β-Ga 2 O 3薄膜。具有生长参数的晶体结构的演变表明，在高温晶种层上生长的氧化镓薄膜以及溅射功率，沉积压力和基板前退火等各种优化的生长参数已被证明对展现优异的晶体质量极为有利。然而，发现β-Ga2 O 3在具有种子层的Si衬底上的直接生长本质上是非晶的。详细讨论了各种生长条件的关键作用。优化后的器件的光响应显示出95.64 AW -1的光响应性，相应的量子效率为4。