Diffusion in a magnesium (Mg)-implanted homoepitaxial GaN layer during ultra-high-pressure annealing (UHPA, in ambient nitrogen, under 1 GPa) was investigated. Annealing at 1573 K resulted in Mg-segregation at the edge of the implanted region, which was suppressed using a higher temperature of 1673 K. Hydrogen (H) atoms were incorporated during the UHPA, resulting in the Mg and H developing the same diffusion profile in the deeper region. The diffusion coefficient of the Mg-implanted sample was 3.3 × 10 −12 cm 2 s −1 at 1673 K from the annealing duration dependence, 30 times larger than that of the epitaxial Mg-doped sample, originating from ion implantation-induced defects.

中文翻译：

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通过超高压退火在注入Mg的GaN中重新分布Mg和H原子

研究了在超高压退火（UHPA，在环境氮气中，低于1 GPa）过程中，植入镁（Mg）的同质外延GaN层中的扩散。在1573 K处退火会导致Mg在植入区域的边缘偏析，这在1673 K的较高温度下得到了抑制。在UHPA过程中掺入了氢（H）原子，导致Mg和H形成了相同的扩散曲线在更深的地区。Mg注入样品在1673 K处的退火持续时间相关性的扩散系数为3.3×10 -12 cm 2 s -1，这是由于离子注入引起的缺陷而使掺Mg外延样品的扩散系数的30倍。