In this study, the authors present a P-band phased array front-end for radar applications, implemented using a 0.18 SiGe BiCMOS process, thereby enhancing robustness over process-voltage-temperature (PVT) variations. It comprises a low noise amplifier, 6-bit attenuator, 6-bit phase shifter, power amplifier, T-R switches as well as control circuits. As the key here is to achieve high resolutions in both gain and phase controls, the 6-bit attenuator and 6-bit phase shifter are optimised by cascading unit cells with different topologies, hence ensuring a good balance between accuracy, silicon area and robustness. Temperature compensation techniques are also used in the low noise amplifier and power amplifier so that the circuit works robustly against PVT variations. Fabricated using TowerJazz 0.18 SiGe BiCMOS technology, the prototype front-end occupies a chip area of , including bonding pads and test buffers. It performs with a receiver (RX) gain of 12 dB, a 3 dB noise figure, and a transmitter (TX) gain of 29 dB, while consuming 60 mW (RX mode) and 600 mW (TX mode) from a 3.3 V supply voltage. The chip is also measured in extreme conditions (e.g. temperatures exceeding ) to ensure robust operation and is suitable for low-cost phased array systems.

中文翻译：

---

面向鲁棒性的P波段相控阵雷达前端，具有0.18的高相位和增益分辨率 $ {\ rm \ mu m} $μ米 双CMOS

在这项研究中，作者提出了一种用于雷达应用的P波段相控阵前端，使用0.18实现 SiGe BiCMOS工艺，从而增强了工艺电压-温度（PVT）变化的稳定性。它包括一个低噪声放大器，一个6位衰减器，一个6位移相器，功率放大器，TR开关以及控制电路。由于此处的关键是要在增益和相位控制中均实现高分辨率，因此通过级联具有不同拓扑的单位单元来优化6位衰减器和6位移相器，从而确保了精度，硅面积和耐用性之间的良好平衡。低噪声放大器和功率放大器中还使用了温度补偿技术，因此该电路可有效抵抗PVT变化。使用TowerJazz 0.18制作 SiGe BiCMOS技术的原型前端占用了一块芯片面积 ，包括焊盘和测试缓冲液。它的接收器（RX）增益为12 dB，噪声系数为3 dB，发送器（TX）增益为29 dB，而3.3 V电源消耗60 mW（RX模式）和600 mW（TX模式）。电压。还可以在极端条件下（例如，温度超过 ）以确保稳定运行，并适用于低成本相控阵系统。