We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with minimum 8 nm channel thickness, thanks to the properties of IGZO material, junctionless FET operation, nearly-zero low-k interfacial layer on metal-oxide channel and effective capping for realizing ferroelectric phase formation with HfZrO2 (HZO). The controllable memory operations are achieved with the use of back gate. The design guideline of IGZO FeFET is proposed by discussing the thickness of front gate oxide HZO and back gate oxide SiO2 using TCAD simulation. The material and electrical properties of metal/HZO/IGZO/metal capacitor are also investigated. Metal/HZO/IGZO/metal capacitor has up to 108 endurance and over one-year retention. IGZO FeFET shows a potential for high-density and low-power memory application.

中文翻译：

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用于高密度存储器应用的具有超薄 IGZO 通道的低电压操作铁电 FET

我们已经制造并展示了具有存储器操作的超薄 In-Ga-Zn-O (IGZO) 通道铁电 HfO2 场效应晶体管 (FET)。超薄体 IGZO 铁电 FET (FeFET) 显示出高迁移率和近乎理想的亚阈值斜率，通道厚度最小为 8 nm，这要归功于 IGZO 材料的特性、无结 FET 操作、金属氧化物通道上几乎为零的低 k 界面层和使用 HfZrO2 (HZO) 实现铁电相形成的有效封端。可控内存操作是通过使用背栅实现的。通过使用 TCAD 模拟讨论前栅氧化层 HZO 和背栅氧化层 SiO2 的厚度，提出了 IGZO FeFET 的设计指南。还研究了金属/HZO/IGZO/金属电容器的材料和电性能。金属/HZO/IGZO/金属电容器具有高达108次的耐用性和一年以上的保留时间。IGZO FeFET 显示出高密度和低功耗存储器应用的潜力。