It is my great pleasure to announce the winner of the 2019 Electron Devices Society George E. Smith Award given to a letter published in the IEEE Electron Device Letters (EDL) in 2019. The selection was made by vote of EDL’s Editors. The letter is titled “Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit” and it is authored * by Yuhao Zhang, Min Sun, Josh Perozek, Zhihong Liu, Ahmad Zubair, Daniel Piedra, Nadim Chowdhury, Xiang Gao, Kenneth Shepard, and Tomas Palacios. The letter was published in the January 2019 issue of EDL.

中文翻译：

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2019 年电子器件学会 George E. Smith 奖

我很高兴地宣布 2019 年电子器件协会 George E. Smith 奖的获得者，该奖项授予 2019 年 IEEE 电子器件快报 (EDL) 上发表的一封信。该奖项由 EDL 的编辑投票选出。这封信的标题是“具有创纪录开关品质因数的大面积 1.2-kV GaN 垂直功率 FinFET”，作者 * 作者：Yuhao Zhang、Min Sun、Josh Perozek、Zhihong Liu、Ahmad Zubair、Daniel Piedra、Nadim Chowdhury、向高、肯尼斯·谢泼德和托马斯·帕拉西奥斯。这封信发表在 2019 年 1 月的 EDL 杂志上。