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Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-08-01 , DOI: 10.1109/led.2020.3003804
Ying-Jiang Guo , Kai-Da Xu , Xianjin Deng , Xu Cheng , Qiang Chen

A gallium arsenide (GaAs)-based millimeter-wave broadband bandpass filter (BPF) is proposed based on slotted half-mode substrate integrated waveguide (HMSIW) spoof surface plasmon polaritons (SSPPs). The center frequency and bandwidth of this SSPP-based on-chip BPF can be easily controlled by tuning the geometry dimensions of the SSPP unit cell, which is attributed to its unique dispersion characteristics. For demonstration, a prototype of the proposed BPF is fabricated and experimentally characterized, with good agreement between the simulated and measured results. Due to the ability of the strong electric field confinement, the proposed on-chip SSPP structure has lower coupling feature with closely-spaced transmission line circuits than its counterpart traditional HMSIW structure.

中文翻译:

基于欺骗表面等离子体激元的毫米波片上带通滤波器

基于开槽半模衬底集成波导 (HMSIW) 欺骗表面等离子体激元 (SSPP),提出了一种基于砷化镓 (GaAs) 的毫米波宽带带通滤波器 (BPF)。这种基于 SSPP 的片上 BPF 的中心频率和带宽可以通过调整 SSPP 晶胞的几何尺寸轻松控制,这归因于其独特的色散特性。为了演示,制造了所提出的 BPF 的原型并进行了实验表征,模拟结果和测量结果之间具有良好的一致性。由于强电场限制的能力,所提出的片上 SSPP 结构比其对应的传统 HMSIW 结构与紧密间隔的传输线电路具有较低的耦合特性。
更新日期:2020-08-01
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