Among the III-V semiconductor materials, indium arsenide (InAs) nanowire (NWs) with high carrier mobility are expected to be alternative channels for high-performance and low-power field-effect transistors (FETs). However, there is a challenge in enhancing the on-state current for the InAs NW-channel vertical gate-all-around (VGAA) structures on Si. We investigated vertical InAs/InP core-shell (CS) NW-channels to enhance the current and demonstrated InAs/InP CS NW VGAA FETs. The InAs/InP CS NW-channel enhanced the on-state current while maintaining a small off-leakage current. The devices showed an on-state current of 40 $\mu \text{A}/\mu \text{m}$ , off-leakage current of 1 pA/ $\mu \text{m}$ , and subthreshold slope of 111 mV/dec at $\text{V}_{\text {DS}} =0.50$ V. The origin of the current enhancement suggests that there is a formation of two-dimensional electron gas (2DEG) in the InAs/InP CS NW-channel, and the characteristics of the InAs/InP CS NW VGAA FET revealed that the InP interlayer at draian edge and low source resistivity are important parameters to take advantage of 2DEG for CS NW VGAA FET.

中文翻译：

---

砷化铟/磷化铟核壳纳米线垂直栅环场效应晶体管在硅上的集成

在 III-V 族半导体材料中，具有高载流子迁移率的砷化铟 (InAs) 纳米线 (NW) 有望成为高性能和低功率场效应晶体管 (FET) 的替代通道。然而，在提高 Si 上 InAs NW 沟道垂直栅极全环 (VGAA) 结构的导通电流方面存在挑战。我们研究了垂直 InAs/InP 核壳 (CS) NW 通道以增强电流并演示了 InAs/InP CS NW VGAA FET。InAs/InP CS NW 沟道增强了导通电流，同时保持了小的关断泄漏电流。器件的通态电流为 40 $\mu \text{A}/\mu \text{m}$ , 关断漏电流为 1 pA/ $\mu \text{m}$ 和 111 mV/dec 的亚阈值斜率 $\text{V}_{\text {DS}} =0.50$ V. 电流增强的起源表明在 InAs/InP CS NW 沟道中形成了二维电子气 (2DEG)，InAs/InP CS NW VGAA FET 的特性揭示了 InP 中间层在漏极边缘和低源电阻率是利用 CS NW VGAA FET 的 2DEG 的重要参数。