Correspondence Lars Bröcker, Institute for Surface Technology, IOT, Technische Universität Braunschweig, Bienroder Weg 54 E, 38108 Braunschweig, Germany. Email: l.broecker@tu-braunschweig.de Abstract The short residence time of Ar–HMDSO (Ar–hexamethyldisiloxane) gas mixtures rapidly flowing across atmospheric‐pressure, glow‐type, single‐filament dielectric barrier discharges is utilized to accomplish thin‐film deposition via a purely ionic route. A comparison of thin‐film volumes obtained from profilometry, on the one hand, and from the transferred charge, on the other hand, enables to evaluate the mass of the ions contributing to the film growth. For HMDSO fractions at the lower end of the studied range of molar fractions, 50 ppm, pentamethyldisiloxanyl cations (Me3SiOSiMe2 , PMDS), generated from the monomer via Penning ionization by Ar(1s) species, are mainly responsible for film formation. For HMDSO fractions growing beyond 1,000 ppm, ionic oligomerization processes by reactions of PMDS with HMDSO molecules result in a 2.5‐fold increase of the average deposited ion mass.

中文翻译：

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Ar-HMDSO 混合物中单丝介质阻挡放电产生离子膜沉积的证据

通讯 Lars Bröcker，表面技术研究所，IOT，Technische Universität Braunschweig, Bienroder Weg 54 E, 38108 Braunschweig, Germany。电子邮件：l.broecker@tu-braunschweig.de 摘要 Ar-HMDSO（Ar-六甲基二硅氧烷）气体混合物的短停留时间快速流过大气压、辉光型、单丝介质阻挡放电，用于实现薄通过纯离子途径进行薄膜沉积。一方面通过轮廓测定法获得的薄膜体积与另一方面通过转移电荷获得的薄膜体积的比较，可以评估有助于薄膜生长的离子质量。对于摩尔分数研究范围下限的 HMDSO 分数，50 ppm，五甲基二硅氧烷基阳离子（Me3SiOSiMe2，PMDS），由 Ar(1s) 物种通过 Penning 电离从单体产生，主要负责成膜。对于超过 1,000 ppm 的 HMDSO 部分，PMDS 与 HMDSO 分子反应的离子低聚过程导致平均沉积离子质量增加 2.5 倍。