Abstract The present study's main purpose is to determine the current-voltage (I–V) performance of Graphene (Gr) based hetero nanostructure produced on Al2O3/p-Si. Graphene synthesis was carried out using the chemical vapor deposition (CVD) technique on Copper (Cu) foils used as a metal catalyst and transferred onto Al2O3/p-Si using the conventional transfer method. The I–V characteristics of this structure were measured in the dark environment, and the electrical properties of the Gr/Si structure were characterized at room temperature. The rectifying ratio (RR) of the structure was found to be about 103 at ± 3 V. The electrical properties of ideality factor (n), series resistance (Rs), and barrier height (Φb) were examined by using the theory of Thermionic Emission (TE), Norde's method, and Cheung's method. The values of Φb, which were calculated using Norde's method, Cheung's method, and the theory of thermionic emission (TE), were found to be 0.69 eV, 0.71 eV, and 0.68 eV, respectively. The ideality factor was found to be approximately 3.89 according to the theory of TE. The values of series resistance were also determined using the Norde's method and Cheung's two different parameters (dV/dln(I) and H(I)) found to be 9.60 kΩ, 9.12 kΩ, and 5.94 kΩ, respectively.

中文翻译：

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使用各种方法对基于石墨烯的结构在 Al2O3/p-Si 上的电流-电压分析

摘要 本研究的主要目的是确定在 Al2O3/p-Si 上生产的基于石墨烯 (Gr) 的异质纳米结构的电流-电压 (I-V) 性能。石墨烯合成使用化学气相沉积 (CVD) 技术在用作金属催化剂的铜 (Cu) 箔上进行，并使用常规转移方法转移到 Al2O3/p-Si 上。该结构的 I-V 特性在黑暗环境中测量，Gr/Si 结构的电学特性在室温下表征。发现该结构的整流比 (RR) 在 ± 3 V 时约为 103。 理想因子 (n)、串联电阻 (Rs) 和势垒高度 (Φb) 的电学特性通过使用热离子理论来检验排放 (TE)、Norde 方法和 Cheung 方法。Φb 的值，使用 Norde 方法、Cheung 方法和热电子发射理论 (TE) 计算得出，分别为 0.69 eV、0.71 eV 和 0.68 eV。根据 TE 理论，理想因子约为 3.89。串联电阻的值也使用 Norde 的方法和 Cheung 的两个不同参数（dV/dln(I) 和 H(I)）确定，分别为 9.60 kΩ、9.12 kΩ 和 5.94 kΩ。