Abstract Considering Dresselhaus-type spin–orbit coupling (SOC), we theoretically investigate spin-polarized transport in a 3-layered semiconductor heterostructure, InSb/InxGa1-xAs/GaSb. Adopting improved transfer matrix method to solve Schrodinger equation, electronic transmission coefficient is obtained exactly, and then spin polarization ratio is evaluated. An appreciable electron-spin polarization effect by the Dresselhaus-SOC appears in this layered semiconductor heterostructure. Spin polarization is associated closely with in-plane wave vector, incident direction and SOC strength. In particular, both magnitude and sign of spin polarization are manipulated by strain engineering or an appropriate intermediate-layer. Therefore, such a 3-layered semiconductor heterostructure can serve as a controllable spin filter for spintronics device applications.

中文翻译：

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Dresselhaus 自旋轨道耦合在 3 层半导体异质结构中诱导电子自旋极化

摘要 考虑到 Dresselhaus 型自旋轨道耦合 (SOC)，我们从理论上研究了 3 层半导体异质结构 InSb/InxGa1-xAs/GaSb 中的自旋极化输运。采用改进的传递矩阵法求解薛定谔方程，精确得到电子传输系数，进而评估自旋极化率。在这种分层半导体异质结构中出现了由 Dresselhaus-SOC 引起的明显电子自旋极化效应。自旋极化与面内波矢量、入射方向和 SOC 强度密切相关。特别是，自旋极化的幅度和符号都由应变工程或适当的中间层控制。所以，