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ANTI-WEAR PERFORMANCE OF POLISHED MICROCRYSTALLINE DIAMOND FILMS SLIDING AGAINST Si3N4 UNDER WATER LUBRICATION
Surface Review and Letters ( IF 1.1 ) Pub Date : 2020-05-19 , DOI: 10.1142/s0218625x20500080
YU-XIAO CUI 1, 2, 3 , YUANPING HE 3 , CHUNHUI JI 3 , BIN LIN 3 , DAWEI ZHANG 3
Affiliation  

In this work, aiming at enhancing the tribological behavior of chemical vapor-deposited (CVD) diamond and Si3N4 tribo-pair, mechanical polishing is performed on CVD microcrystalline diamond (MCD) films. The tribological performance of as-fabricated polished MCD (MCD-p) films is investigated by ball-on-plate reciprocating friction tests with Si3N4 ceramic balls as the counterparts under water lubrication, where the as-grown MCD films, nanocrystalline diamond (NCD) films and Si3N4 ceramic plate are employed as the contrast specimens. Under a normal load of 10 N and at a reciprocating frequency of 30 Hz for 2-mm distance, the as-fabricated MCD, NCD and MCD-p films exhibit similar steady friction coefficients after run-in state, which are 0.036, 0.032 and 0.035, respectively. Nevertheless, the wear rate of Si3N4 counterparts varies. Due to the plowing effect of as-grown MCD and NCD films, severe abrasion of Si3N4 counterparts can be observed after sliding for 20[Formula: see text]min. For the MCD-p specimen, however, the Si3N4 counterpart exhibits 2–3 orders of magnitude lower wear rate than those sliding against the as-grown MCD or NCD specimen. On the other hand, due to the reciprocating motion failing to form fluid film between the contact surfaces, high friction coefficient (0.092) and rather severe abrasion are observed for the self-mated Si3N4 ceramic contact.

中文翻译:

抛光微晶金刚石薄膜在水润滑下对 Si3N4 滑动的抗磨损性能

在这项工作中,旨在提高化学气相沉积 (CVD) 金刚石和 Si 的摩擦学行为3ñ4对 CVD 微晶金刚石 (MCD) 薄膜进行摩擦对机械抛光。通过使用硅的球板往复摩擦试验研究制造的抛光 MCD (MCD-p) 薄膜的摩擦学性能3ñ4陶瓷球作为水润滑下的对应物,其中生长的 MCD 薄膜、纳米晶金刚石 (NCD) 薄膜和 Si3ñ4陶瓷板用作对比样品。在 10 N 的法向载荷和 30 Hz 的往复频率下,距离为 2 mm 的情况下,制备的 MCD、NCD 和 MCD-p 薄膜在磨合状态后表现出相似的稳定摩擦系数,分别为 0.036、0.032 和0.035,分别。尽管如此,Si的磨损率3ñ4同行各不相同。由于生长的 MCD 和 NCD 薄膜的犁效应,Si 的严重磨损3ñ4滑动20[公式:见正文]min后即可观察到对应物。然而,对于 MCD-p 样品,Si3ñ4对应的磨损率比在生长的 MCD 或 NCD 试样上滑动的磨损率低 2-3 个数量级。另一方面,由于往复运动未能在接触表面之间形成流体膜,因此观察到自配合 Si 具有较高的摩擦系数(0.092)和相当严重的磨损。3ñ4陶瓷触点。
更新日期:2020-05-19
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