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Free-Standing Large-Area Nanoperforated Gold Membranes Fabricated by Hopping Electrodeposition
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-07-26 , DOI: 10.1149/2162-8777/aba6a2
Eduard V. Monaico 1 , Elena I. Monaico 1 , Veaceslav V. Ursaki 1, 2 , Ion M. Tiginyanu 1, 2
Affiliation  

A room-temperature two-step cost-effective electrochemical technology is proposed for the preparation of free-standing Au nanomembranes. A thin Au film with the thickness less than 100 nm was deposited by pulsed electroplating on a GaAs substrate in the first step, while electrochemical etching was applied in the second technological step to introduce porosity into the GaAs substrate underneath the Au film. It has been shown that detachment of the film from the substrate occurs at optimized parameters of anodic etching. Scanning electron microscopy imaging of the deposited Au film revealed its nanoparticulate structure generated via the mechanism of hopping electrodeposition, i.e. the film proved to consist of a monolayer of Au nanoparticles with the mean diameter around 20–30 nm. It was found that nanoholes with the diameter controlled by the duration of negative voltage pulses can be introduced into the Au film during electroplating. The purity of the detached Au nanomembranes...

中文翻译:

跳跃电沉积法制备的大面积纳米孔自由站立金膜

提出了一种室温两步经济有效的电化学技术,用于制备自立的金纳米膜。在第一步中,通过脉冲电镀将厚度小于100 nm的Au薄膜沉积在GaAs衬底上,而在第二步中进行电化学蚀刻,以将孔隙率引入到Au膜下面的GaAs衬底中。已经表明,在阳极蚀刻的优化参数下发生膜与基板的分离。沉积的金膜的扫描电子显微镜成像显示其纳米颗粒结构是通过跳跃电沉积机理产生的,即该膜被证明是由单层金纳米颗粒组成,平均直径约为20-30 nm。发现在电镀期间可以将具有由负电压脉冲的持续时间控制的直径的纳米孔引入Au膜中。分离的金纳米膜的纯度...
更新日期:2020-07-27
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