Abstract — This work reports highly sensitive and linear temperature sensors based on epitaxial silicon carbide (SiC). Circular shaped Ni/4H-nSiC Schottky barrier diode (SBD) temperature sensors of area 3.140 mm2 have been fabricated and characterized in forward current ( I f ) and temperature range from 10 pA to 5 nA and 233 K–473 K, respectively. The highest value of absolute thermal sensitivity | S | has been achieved as 3.425 mV/K at the lowest I f = 10 pA. The sensors show best performance at I f = 0.1 nA with lowest root mean square error, temperature error and highest coefficient of determination as 5.341 mV, 1.620 K and 99.96%, respectively, with | S | = 3.295 mV/K. Moreover, for I f ≤ 20 pA, sensors reach their maximum operating temperature point, i.e., 448 K. The highest value of self-heating in the sensors have been calculated as 1.623 nK. Moreover, asymmetry has been observed between experimental and the theoretical values of | S | which are explained using variation in the barrier height patches (probably caused by defects at the interface) parameter like their effective area, radius, number, barrier height at the saddle point, with the temperature.

中文翻译：

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超低电流范围内基于外延 4H-SiC 的肖特基二极管温度传感器

摘要 — 这项工作报告了基于外延碳化硅 (SiC) 的高灵敏度线性温度传感器。面积为 3.140 mm2 的圆形 Ni/4H-nSiC 肖特基势垒二极管 (SBD) 温度传感器已被制造并表征为正向电流 (I f ) 和温度范围分别为 10 pA 至 5 nA 和 233 K–473 K。绝对热灵敏度最高值| | | 在最低 I f = 10 pA 时已达到 3.425 mV/K。传感器在 I f = 0.1 nA 时表现出最佳性能，最低均方根误差、温度误差和最高确定系数分别为 5.341 mV、1.620 K 和 99.96%，其中 | | | = 3.295 mV/K。此外，对于 I f ≤ 20 pA，传感器达到其最高工作温度点，即 448 K。传感器中自热的最高值已计算为 1。623 纳米。此外，已经观察到实验值和理论值之间的不对称性 | | | 这可以使用势垒高度补丁（可能由界面缺陷引起）参数的变化来解释，例如它们的有效面积、半径、数量、鞍点的势垒高度以及温度。