The two-dimensional semiconductor photocatalytic material has excellent photocatalytic H₂ evolution activity. In order to further improve the hydrogen production activity of g-C₃N₄, this study improved the preparation process of g-C₃N₄ and obtained a new photocatalyst (name H-CN) with a higher absorption range, larger specific surface area, and faster hydrogen production activity. Compared with the originally prepared g-C₃N₄, the H-CN absorption range has been improved, and the utilization of visible light has reached 650 nm. When the doping amount of Pt cocatalyst was 1.0 wt%, the H-CN demonstrates excellent photocatalytic hydrogen production activity, with a hydrogen production rate of 4.3 mmol h⁻¹·g⁻¹, which was 7.0 times higher than that pure 1.0 wt% Pt/g-C₃N₄. The fluorescence spectroscopy of H-CN showed better separation of carriers and longer lifetime. This study has guiding significance for the preparation of subsequent ultra-thin nanosheet photocatalysts and the establishment of high-efficiency photocatalytic systems.

二维半导体光催化材料具有优异的光催化H ₂放出活性。为了进一步提高gC ₃ N _4的产氢活性，本研究改进了gC ₃ N ₄的制备工艺，得到了一种具有更高吸收范围，更大的比表面积和更快的光催化剂（名称为H-CN）。制氢活性。与最初制备的gC ₃ N _4相比，提高了H-CN的吸收范围，可见光利用率达到了650 nm。当Pt助催化剂的掺杂量为1.0 wt％时，H-CN表现出优异的光催化制氢活性，制氢速率为4.3 mmol h ^-1 ·g ^-1，是纯1.0 wt％的7.0倍。 Pt / gC ₃ N ₄。H-CN的荧光光谱显示出更好的载流子分离和更长的寿命。该研究对后续超薄纳米片光催化剂的制备和高效光催化体系的建立具有指导意义。