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Magneto-Impedance in Co 35 Fe 65 /Cu/Co 35 Fe 65 Single and Bi-layer Thin Films
Electronic Materials Letters ( IF 2.4 ) Pub Date : 2020-07-26 , DOI: 10.1007/s13391-020-00237-w
G. Durak Yüzüak , E. Yüzüak , V. Nevruzoğlu

Abstract

The magneto-impedance response in Co35Fe65/Cu/Co35Fe65 thin film magneto-impedance cells deposited by the thermal evaporation method has been studied with single and bilayer structures at the substrate temperature 300 K and 150 K. While the thin film deposited at 300 K has BCC structure, the amorphous character is dominant for 150 K deposited ones. Entire films show soft magnetic behavior with high saturation magnetization (MS) and low coercive field (HC). Bilayer thin film structure reveals higher magneto-impedance values than single-layer thin films. The relation between the magneto-impedance effect and layered structure is discussed in terms of structural growing mechanism and scattering effect. The highest magneto-impedance sensitivity (η) 37%/Oe is observed for the Co35Fe65/Cu/Co35Fe65 bilayer thin film. The HC and remanence ratio (MR/MS) values for single layer at 300 K, single and bilayer cells at 150 K are measured as 51, 158 and 253 Oe—0.48, 0.78, and 0.80, respectively. When η with the Soliton wave model is compared with the sample at room temperature, an increase of over 1700% is observed. The difference between the classical growing method at 300 K and the Soliton wave model at 150 K is the evidence of the logic of the work performed and its accuracy. The relatively high sensitivity is connected with interlayer usage and low temperature-smaller particle size in Soliton model growth. The observed findings are of practical importance to develop future technological magnetic sensor applications with high sensitivity.

Graphic Abstract



中文翻译:

Co 35 Fe 65 / Cu / Co 35 Fe 65单层和双层薄膜中的磁阻抗

摘要

以单层和双层结构在衬底温度为300 K和150 K的条件下,研究了通过热蒸发法沉积的Co 35 Fe 65 / Cu / Co 35 Fe 65薄膜磁阻电池中的磁阻抗响应。以300 K沉积的薄膜具有BCC结构,以150 K沉积的薄膜为主要特征。整个薄膜都表现出软磁行为,具有高饱和磁化强度(M S)和低矫顽场(H C))。双层薄膜结构显示出比单层薄膜更高的磁阻值。从结构生长机理和散射效应两方面讨论了磁阻效应与层状结构之间的关系。对于Co 35 Fe 65 / Cu / Co 35 Fe 65双层薄膜观察到最高的磁阻灵敏度(η)37%/ Oe 。H C和剩磁比(M R / M S)在300 K时的单层值,在150 K时的单层和双层电池的测量值分别为51、158和253 Oe-0.48、0.78和0.80。当在室温下将具有孤子波模型的η与样品进行比较时,观察到的增加超过1700%。300 K的经典生长方法与150 K的孤子波模型之间的差异证明了所进行的功的逻辑性和准确性。相对较高的灵敏度与中间层的使用以及低温-孤子模型生长中较小的粒径有关。观察到的发现对于开发具有高灵敏度的未来技术磁传感器应用具有实际意义。

图形摘要

更新日期:2020-07-26
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