Constructing two-dimensional (2D) layered materials with traditional three-dimensional (3D) semiconductors into complex heterostructures has opened a new platform for the development of optoelectronic devices. Herein, large-area high performance self-driven photodetectors based on monolayer WS2/GaAs heterostructures were successfully fabricated with a wide response spectrum band ranging from the ultraviolet to near-infrared region. The detector exhibits an overall high performance, including high photoresponsivity of 65.58 A/W at 365 nm and 28.50 A/W at 880 nm, low noise equivalent power of 1.97×10−15 W/Hz1/2, high detectivity of 4.47×1012 Jones, and fast response speed of 30/10 ms. This work suggests that the WS2/GaAs heterostructure is promising in future novel optoelectronic device applications, and also provides a low-cost, easy-to-process method for the preparation of 2D/3D heterojunction-based devices.

中文翻译：

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基于单层 WS2/GaAs 异质结的高响应度自驱动光电探测器

用传统的三维（3D）半导体将二维（2D）层状材料构建成复杂的异质结构，为光电器件的发展开辟了新的平台。在此，成功地制造了基于单层 WS2/GaAs 异质结构的大面积高性能自驱动光电探测器，其响应光谱范围从紫外到近红外范围很宽。该探测器具有整体高性能，包括365 nm处65.58 A/W和880 nm处28.50 A/W的高光响应度，1.97×10−15 W/Hz1/2的低噪声等效功率，4.47×1012的高探测率琼斯，30/10 毫秒的快速响应速度。这项工作表明 WS2/GaAs 异质结构在未来的新型光电器件应用中很有前景，并且还提供了一种低成本、