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Characterization of the photothermal interaction of a semiconducting solid sphere due to the mechanical damage and rotation under Green-Naghdi theories
Mechanics of Advanced Materials and Structures ( IF 2.8 ) Pub Date : 2020-07-25 , DOI: 10.1080/15376494.2020.1799123
Hamdy M. Youssef 1, 2 , A. A. El-Bary 3
Affiliation  

Abstract

The present paper is dealing with a new mathematical model of a thermoelastic semiconducting solid sphere based on the Green-Naghdi theories to study the photothermal interaction. We applied two considerations: the mechanical damage variable, and rotation with constant speed. The bounding surface of the sphere has been thermally loaded by thermal shock. Laplace transform has been applied, and its inversions have been computed numerically. The numerical results of the temperature increment, carrier density increment, strain, displacement, stress, and stress-strain energy have been represented in figures. The damage and rotation have significant effects on all the studied functions.



中文翻译:

Green-Naghdi 理论下由于机械损伤和旋转引起的半导体固体球的光热相互作用的表征

摘要

本文正在处理基于 Green-Naghdi 理论的热弹性半导体固体球的新数学模型,以研究光热相互作用。我们应用了两个考虑因素:机械损伤变量和恒速旋转。球体的边界表面已经受到热冲击的热负荷。已经应用了拉普拉斯变换,并且已经对它的反演进行了数值计算。温度增量、载流子密度增量、应变、位移、应力和应力-应变能的数值结果已用数字表示。损坏和旋转对所有研究的功能都有显着影响。

更新日期:2020-07-25
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