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Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation
Composites Communications ( IF 8 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.coco.2020.100415
A.I. Gumarov , A.M. Rogov , A.L. Stepanov

Abstract The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at Energy 40 keV, current density 8 μA/cm2 and doses of 3.1·1016 and 1.25·1017 ion/cm2 are presented. It was shown that if the dose is low Cu nanoparticles with average diameter of 10 nm are formed in a near-surface implanted Si layer. When the dose is higher Cu ions chemically interact with the Si atoms and the synthesis of the η″-phase Cu3Si instead of Cu nanoparticles is observed. Cu nanoparticles transformation to Cu3Si phase in the sample heated by long time implantation is discussed.

中文翻译:

通过离子注入在 Si 中形成 Cu 纳米颗粒和 Cu3Si 相

摘要 介绍了Cu+离子在能量为40 keV、电流密度为8 μA/cm2、剂量为3.1·1016和1.25·1017离子/cm2的情况下低能量高剂量注入单晶c-Si的结果。结果表明,如果剂量低,则在近表面注入的 Si 层中形成平均直径为 10 nm 的 Cu 纳米颗粒。当剂量较高时,Cu 离子与 Si 原子发生化学反应,观察到合成 η″相 Cu3Si 而不是 Cu 纳米颗粒。讨论了通过长时间注入加热的样品中Cu纳米颗粒向Cu3Si相的转变。
更新日期:2020-10-01
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