Abstract Highly deformed tungsten (W) thin foils could show excellent low temperature ductility, even at room temperature. A laminated composite using pure W foils has been proposed for the application to the plasma-facing material of divertors, which is a composite material consisting of stacked pure W thin foils and interlayer materials. However, the degradation of low temperature ductility attributed to the recrystallization and neutron irradiation of pure W foils is one of the concerns of the laminated composite using pure W foils. Potassium (K) doping is known as one of the methods to suppress recrystallization and to improve neutron irradiation resistance, in addition to improving the low temperature fracture toughness. Therefore, a laminated composite using K-doped W foils was developed in the present study, which has the possibility to show improved mechanical properties even after the neutron irradiation compared to the pure W foil laminated composite. The K-doped W foil laminates using an interlayer made of pure cupper (Cu) and pure vanadium (V) were fabricated at 900 and 1250 °C in the present study. An enough ductility at room temperature was observed in these laminates, even after the fabrication at 1250 °C.

中文翻译：

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使用掺钾钨的层压复合材料

摘要 高度变形的钨 (W) 薄箔即使在室温下也能表现出优异的低温延展性。已经提出了一种使用纯钨箔的层压复合材料，用于偏滤器面向等离子体的材料，它是一种由堆叠的纯钨薄箔和夹层材料组成的复合材料。然而，由于纯钨箔的再结晶和中子辐照导致的低温延展性下降是使用纯钨箔的层压复合材料的问题之一。除了提高低温断裂韧性外，钾 (K) 掺杂被认为是抑制再结晶和提高抗中子辐照的方法之一。因此，本研究开发了一种使用掺钾钨箔的层压复合材料，与纯钨箔层压复合材料相比，即使在中子辐照后，它也有可能显示出改进的机械性能。在本研究中，使用由纯铜 (Cu) 和纯钒 (V) 制成的中间层的 K 掺杂 W 箔层压板在 900 和 1250 °C 下制造。即使在 1250 °C 下制造后，这些层压板在室温下仍具有足够的延展性。