The various levels (5%, 10% and 15%) of Cu-doped TiO2 thin films were grown on the [Formula: see text]-type silicon (Si) wafer by spin coating technique to obtain Al/(Cu:TiO[Formula: see text]/[Formula: see text]-Si (MOS) capacitors. Both the real and imaginary components of complex dielectric ([Formula: see text], complex electric modulus ([Formula: see text], loss tangent (tan [Formula: see text] and alternating electrical conductivity ([Formula: see text] of the obtained Al/(Cu:TiO[Formula: see text]-Si (MOS) capacitors were studied by taking into account the effects of Cu-doping levels into TiO2 viaimpedance spectroscopy method (ISM) in the wide range voltage ([Formula: see text][Formula: see text]V) and frequency (10[Formula: see text]kHz–1[Formula: see text]MHz). All the obtained dielectric parameters were obtained as strongly dependent on frequency, voltage and Cu doping level. The observed anomalous peak in the forward bias region both in the real and imaginary components of [Formula: see text], tan [Formula: see text], complex electric modulus ([Formula: see text] and [Formula: see text] were attributed to the Cu:TiO2 interlay er, series resistance ([Formula: see text], surface states ([Formula: see text], interfacial/surface and dipole polarizations. The higher values of [Formula: see text] at low and intermediate frequencies implied that [Formula: see text] have enough time to follow external ac signal, and also dipoles respond to the applied field to reorient themselves. Consequently, the fabricated Al/(Cu:TiO[Formula: see text]-Si can be successfully used as MOS capacitor or MOS-field-effect transistor (MOSFET) in the industrial applications in near future.

中文翻译：

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Al/Cu:TiO2∕n-Si (MOS) 结构/电容器的介电松弛、电模量和电导率的系统研究

Cu掺杂TiO的不同水平（5%、10%和15%）2通过旋涂技术在[公式：见正文]型硅（Si）晶片上生长薄膜以获得Al/（Cu：TiO [公式：见正文]/[公式：见正文]-Si（MOS）电容器. 复电介质的实部和虚部（[公式：见文]、复电模量（[公式：见文]、损耗角正切（tan [公式：见文]）和交变电导率（[公式：见文]通过考虑Cu掺杂水平对TiO的影响，研究了获得的Al /（Cu：TiO [公式：见文本]-Si（MOS）电容器2通过阻抗谱法 (ISM) 在宽范围电压（[公式：见正文][公式：见正文]V）和频率（10[公式：见正文]kHz–1[公式：见正文]MHz）。所有获得的介电参数都强烈依赖于频率、电压和 Cu 掺杂水平。[公式：见文本]、tan [公式：见文本]、复电模量（[公式：见文本]和 [公式：见文本]归因于 Cu:TiO2层间层、串联电阻（[公式：见文本]、表面状态（[公式：见文本]、界面/表面和偶极极化。[公式：见文本]在低频和中频处的较高值意味着 [公式：见文本]有足够的时间跟随外部交流信号，并且偶极子响应施加的场以重新定向。因此，制造的Al /（Cu：TiO [公式：见文本]-Si可以成功地用作MOS电容器或MOS-场效应晶体管（MOSFET）在不久的将来在工业应用中。