Recently, ferroelectric resistive switching (RS) effect in the ferroelectric/semiconductor heterostructures has been widely studied and the RS performance has been greatly improved. However, the relationships between ferroelectric and RS behaviors as well as interface structure of ferroelectric/semiconductor heterostructures need to be further studied. Herein, a [Formula: see text][Formula: see text]MnO3 (LSMO) layer with the thickness of 7 nm is inserted into [Formula: see text][Formula: see text]O3/Nb:SrTiO3 (PZT/NSTO) heterostructures, and its effects on the ferroelectric and RS behaviors are investigated. The PZT/NSTO heterostructures show significantly asymmetric ferroelectric loops, and the RS ratio in which can reach to three orders of magnitude. However, by inserting the LSMO layer, the ferroelectric loops became relatively symmetric, but the RS effect almost disappeared. It can be considered that the LSMO layer affects the interfacial energy band structure of the PZT/NSTO heterostructures, which makes ferroelectric polarization lose its effect on the modulation of the depletion layer width. Therefore, the existence of the adjustable depletion layer is very important for the RS effect of ferroelectric/semiconductor heterostructures.

中文翻译：

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La0.67Sr0.33 MnO3 插入层对 PbZr0.52Ti0.48O3/Nb:SrTiO3 异质结构铁电和电阻转换行为的影响

最近，铁电/半导体异质结构中的铁电电阻转换（RS）效应得到了广泛的研究，RS性能得到了很大的提高。然而，铁电和RS行为之间的关系以及铁电/半导体异质结构的界面结构需要进一步研究。在此，[公式：见正文][公式：见正文]MnO3将厚度为 7 nm 的 (LSMO) 层插入 [公式：见正文][公式：见正文]O3/Nb:SrTiO3研究了 (PZT/NSTO) 异质结构及其对铁电和 RS 行为的影响。PZT/NSTO异质结构表现出明显的不对称铁电环，其RS比可以达到三个数量级。然而，通过插入 LSMO 层，铁电环变得相对对称，但 RS 效应几乎消失了。可以认为，LSMO层影响了PZT/NSTO异质结构的界面能带结构，使铁电极化失去了对耗尽层宽度调制的作用。因此，可调耗尽层的存在对于铁电/半导体异质结构的RS效应非常重要。