ABSTRACT For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe3O4 nanocrystals on Ge nuclei had a well-controlled interface (Fe3O4/GeOx/Ge) composed of high-crystallinity Fe3O4 and high-quality GeOx layers. The nanocrystals showed uniform resistive switching characteristics (high switching probability of ~90%) and relatively high Off/On resistance ratio (~58). The high-quality interface enables electric field application to Fe3O4 and GeOx near the interface, which leads to effective positively charged oxygen vacancy movement, resulting in high-performance resistive switching. Furthermore, we successfully observed memory effect in nanocrystals with well-controlled interface. The experimental confirmation of the memory effect existence even in ultrasmall nanocrystals is significant for realizing non-volatile nanocrystal memory leading to neuromorphic devices.

中文翻译：

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具有良好控制界面的氧化物异质纳米晶体的电阻开关存储器性能

摘要 为了实现新的信息系统，像突触一样工作的忆阻器引起了人们的广泛关注。我们使用低温生长在 Ge 核/Si 上开发了具有均匀和高阻变性能的孤立的高密度 Fe3O4 纳米晶体。Ge 核上的 Fe3O4 纳米晶体具有良好控制的界面 (Fe3O4/GeOx/Ge)，由高结晶度的 Fe3O4 和高质量的 GeOx 层组成。纳米晶体显示出均匀的电阻开关特性（~90% 的高开关概率）和相对较高的关断/导通电阻比（~58）。高质量的界面使电场应用于界面附近的 Fe3O4 和 GeOx，从而导致有效的带正电的氧空位运动，从而实现高性能的电阻切换。此外，我们成功地观察到具有良好控制界面的纳米晶体的记忆效应。即使在超小纳米晶体中也存在记忆效应的实验确认对于实现导致神经形态器件的非易失性纳米晶体存储器具有重要意义。