ABSTRACT In the Siemens method, high-purity Si is produced by reducing SiHCl3 source gas with H2 ambient under atmospheric pressure. Since the pyrolysis of SiHCl3, which produces SiCl4 as a byproduct, occurs dominantly in the practical Siemens process, the Si yield is low (~30%). In the present study, we generated hydrogen radicals (H-radicals) at pressures greater than 1 atm using tungsten filaments and transported the H-radicals into a reactor. On the basis of the absorbance at 600 nm of WO3-glass exposed to H-radicals in the reactor, we observed that H-radicals with a density of ~1.1 × 1012 cm−3 were transported approximately 30 cm under 1 atm. When SiCl4 was supplied as a source into the reactor containing H-radicals and allowed to react at 850°C or 900°C, Si was produced more efficiently than in reactions conducted under H2 ambient. Because the H-radicals can effectively reduce SiCl4, which is a byproduct in the Siemens method, their use is expected to increase the Si yield for this method.

中文翻译：

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使用在大气压下产生和传输的氢自由基从 SiCl4 源有效生产硅

摘要 在西门子方法中，高纯度硅是通过在常压下用 H2 环境还原 SiHCl3 源气体来生产的。由于在实际的西门子工艺中主要发生 SiHCl3 的热解，产生 SiCl4 作为副产品，因此 Si 产率较低 (~30%)。在本研究中，我们使用钨丝在大于 1 个大气压的压力下产生氢自由基（H 自由基）并将 H 自由基输送到反应器中。根据反应器中暴露于 H-自由基的 WO3-玻璃在 600 nm 处的吸光度，我们观察到密度为 ~1.1 × 1012 cm-3 的 H-自由基在 1 atm 下传输约 30 cm。当 SiCl4 作为来源供应到含有 H 基团的反应器中并允许在 850°C 或 900°C 下反应时，Si 的生产效率比在 H2 环境下进行的反应更有效。