Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent a powerful tool to investigate spin transport in metals, semiconductors and metal/semiconductor heterostructures. The possibility to convert a spin current into a charge current (and vice versa) allows for the design of efficient spin injection/detection schemes, even without the use of ferromagnets, to unravel fundamental spin transport properties. The article reviews the recent advances in the investigation of the spin-charge interconversion phenomena in platforms based on group-IV semiconductors. Convenient experimental architectures to inject and detect spin currents in Ge and Si are discussed, as well as diffusion models for spin transport in these semiconductors.

中文翻译：

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基于IV族半导体的异质结构中的自旋电荷互变

自旋电荷互变现象在固态物理学中无处不在，是研究金属，半导体和金属/半导体异质结构中自旋输运的有力工具。将自旋电流转换为充电电流（反之亦然）的可能性允许设计有效的自旋注入/检测方案，即使不使用铁磁体也能揭示基本的自旋传输特性。本文回顾了基于IV族半导体的平台中自旋电荷互变现象研究的最新进展。讨论了在Ge和Si中注入和检测自旋电流的便捷实验体系结构，以及在这些半导体中自旋传输的扩散模型。