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Impact of snubber parameters on voltage sharing in series-connected insulated gate bipolar transistors
Journal of Power Electronics ( IF 1.4 ) Pub Date : 2020-05-20 , DOI: 10.1007/s43236-020-00094-8
Myeongsu Son , Taeyeong Lee , Soyeon Kwon , Younghoon Cho

This paper shows the relationship between the circuit parameters and the voltage sharing performance in series-connected insulated gated bipolar transistors (IGBTs). A simple analytic model is proposed to examine voltage balancing in series-connected IGBTs. By the proposed model, the reason for voltage imbalance is easily analyzed. In addition, the impact of the time constant of the snubber, which is affected by the snubber components, is detailed. From this analysis, it has been demonstrated that the snubber capacitance should be at least double the output capacitance of the switching device to stabilize voltage sharing. To verify the usefulness of the proposed technique, a multiple pulse tester has been implemented and tested. Experimental results reveal that the error between the proposed model and the practical system is only 1.7%. In addition, the accuracy of the proposed model is high enough to be utilized for the analysis of the series-connected IGBTs.

中文翻译:

缓冲器参数对串联绝缘栅双极晶体管电压共享的影响

本文展示了串联绝缘栅双极晶体管 (IGBT) 中电路参数与均压性能之间的关系。提出了一个简单的分析模型来检查串联连接的 IGBT 中的电压平衡。通过所提出的模型,很容易分析电压不平衡的原因。此外,详细说明了受缓冲器元件影响的缓冲器时间常数的影响。从该分析中可以看出,缓冲电容应至少是开关器件输出电容的两倍,以稳定电压共享。为了验证所提出技术的有效性,已实施并测试了多脉冲测试仪。实验结果表明,所提出的模型与实际系统的误差仅为1.7%。此外,
更新日期:2020-05-20
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