We show that the density of states and gain spectra of InGaAs/GaAs quantum well-dot (QWD) hybrid nanostructures qualitatively differ from that of quantum wells (QWs) and quantum dots. In QWDs, the density of states does not increase to higher energies and ground-state lasing is maintained up to shorter cavities (higher output loss) as compared to QW lasers emitting in the same optical range. The QWD lasers show lower threshold current densities and better temperature stability than the QW ones.

中文翻译：

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使用混合量子阱点修改 InGaAs/GaAs 异质结构态密度和光学增益

我们表明 InGaAs/GaAs 量子阱点 (QWD) 混合纳米结构的态密度和增益光谱在性质上不同于量子阱 (QW) 和量子点。在 QWD 中，与在相同光学范围内发射的 QW 激光器相比，状态密度不会增加到更高的能量并且基态激光保持在更短的腔内（更高的输出损耗）。与 QW 激光器相比，QWD 激光器显示出更低的阈值电流密度和更好的温度稳定性。