The figure of merit ZT is the direct embodiment of thermoelectric performance for a given material. However, as an indicator of performance improvement, the only ZT value is not good enough to identify its outstanding inherent properties, which are highly sought in thermoelectric community. Here, we utilize one powerful parameter to reveal the outstanding properties of a given material. The weighted mobility is used to estimate the carrier transports of p-type SnS crystals, including the differences in doping level, carrier scattering and electronic band structure. We analyze the difference in carrier scattering mechanism for different crystal forms with the same doping level, then evaluate and confirm the temperature-dependent evolution of electronic band structures in SnS. Finally, we calculate the quality factor B based on the weighted mobility, and establish the relationship between ZT and B to further predict the potential performance in p...

中文翻译：

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利用加权迁移率和品质因数预测P型SnS晶体的潜在性能

品质因数ZT是给定材料的热电性能的直接体现。但是，作为性能改进的指标，唯一的ZT值不足以识别其出色的固有特性，这在热电界非常受欢迎。在这里，我们利用一个强大的参数来揭示给定材料的出色性能。加权迁移率用于估计p型SnS晶体的载流子传输，包括掺杂水平，载流子散射和电子能带结构的差异。我们分析了具有相同掺杂水平的不同晶体形式的载流子散射机制的差异，然后评估并确认了SnS中电子能带结构的温度依赖性演化。最后，我们根据加权迁移率计算出质量因子B，