Layered material indium selenide (In x Se y ) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400°C at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In x Se y layer emerges on top of the insulating ZrSe 2 layer. Different archetypes, such as InSe, α -In 2 Se 3 and β -In 2 Se 3 , are found in the In x Se y layers. A negative magnetoresistance of 40% at 2K under 9T magnetic field is observed. Such an In x Se y /ZrSe 2 heterostructure with good lattice-matching may serve as a candidate for device applications.

中文翻译：

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InP（111）衬底上锆辅助In x Se y的外延生长

层状材料硒化铟（In x Se y）是制造下一代电子和光子器件的有希望的候选者。我们报道了这种范德华兹材料的锆辅助MBE生长。当以0.01毫升/分钟的恒定锆通量速率将锆和硒共沉积到衬底温度为400°C的磷化铟衬底上时，多晶型In x Se y层出现在绝缘ZrSe 2层的顶部。在In x Se y层中发现了不同的原型，例如InSe，α-In 2 Se 3和β-In 2 Se 3。在9T磁场下，在2K下观察到40％的负磁阻。具有良好晶格匹配的这种In x Se y / ZrSe 2异质结构可以用作器件应用的候选者。