In this article, the combined effect of BOX thickness ( ${T}_{\text {BOX}}$ ) and ground-plane (GP) doping ( ${N}_{\text {GP}}$ ) on channel carrier mobility and analog figures of merit (FoMs) is investigated. It is reported that the thin BOX along with higher ${N}_{\text {GP}}$ will limit the electron/hole mobility of ultrathin body and BOX fully depleted silicon-on-insulator (UTBB FD-SOI) MOS transistors. The physics responsible for this observation is discussed in detail. The contrasting behavior of different GPs, the effect of ${T}_{\text {BOX}}$ scaling, and gate-length scaling on device behavior is also analyzed. It is also shown that in advanced UTBB FD-SOI MOS transistors, a tradeoff exists between transistor intrinsic gain, cutoff frequency, and non-linearity. In nMOS transistors, the best intrinsic gain and cut-off frequency can be achieved with ultrathin BOX and n-type GP (or with no GP), whereas the best linearity can be achieved with ultrathin BOX and p-type GP implant.

中文翻译：

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缩放对 UTBB FD-SOI MOS 晶体管模拟 FoM 的影响：详细分析

在本文中，BOX 厚度的组合效应（ ${T}_{\text {BOX}}$ ) 和地平面 (GP) 掺杂 ( ${N}_{\text {GP}}$ ) 对通道载流子迁移率和模拟品质因数 (FoM) 进行了研究。据悉，薄BOX随着更高 ${N}_{\text {GP}}$ 将限制超薄体和 BOX 完全耗尽绝缘体上硅 (UTBB FD-SOI) MOS 晶体管的电子/空穴迁移率。详细讨论了导致这种观察的物理学。不同GP的对比行为，效果 ${T}_{\text {BOX}}$ 缩放和栅极长度缩放对器件行为也进行了分析。还表明，在先进的 UTBB FD-SOI MOS 晶体管中，晶体管固有增益、截止频率和非线性之间存在折衷。在 nMOS 晶体管中，使用超薄 BOX 和 n 型 GP（或不使用 GP）可以获得最佳的固有增益和截止频率，而使用超薄 BOX 和 p 型 GP 注入可以实现最佳线性度。