The proposition of integrating the 2-D materials and ferroelectric negative-capacitance MOSFETs (NCFETs) was expected to have excellent steep slope ${I}$ – ${V}$ characteristics due to the combined advantages of both ultrathin body channel material and negative-capacitance effect. Recent experiments demonstrated the excellent steep slope features of 2-D material NCFETs. Therefore, it was important to understand the device physics of this characteristic, its performance projection, and the benchmark with NCFETs based on conventional Group IV materials. In this article, we conducted a computational study of 2-D material NCFETs based on MoS₂ under the nonequilibrium Green’s function (NEGF)-Poisson self-consistent scheme with free-Gibbs energy calculation to judge the operating path in polarization–electric field (P–E) relation. Monolayer MoS₂ (1L-MoS₂) was chosen as channel material while various thickness of ultrathin body silicon (UTB-Si) for benchmark purpose. The results showed an excellent average subthreshold slope (SS) of ~25 mV/dec in 1L-MoS₂ NCFETs compared to ~32 mV/dec of the UTB-Si counterparts. It was found that the steep-slope features in 1L-MoS₂ NCFETs could be attributed to the more optimized capacitance matching in 1L-MoS₂ NCFETs and tunneling currents at the subthreshold region.

中文翻译：

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基于超薄体硅和单层二硫化钼的负电容 MOSFET 的性能评估和器件物理研究

集成二维材料和铁电负电容 MOSFET (NCFET) 的提议预计具有出色的陡坡度 ${I}$ —— ${V}$ 超薄体沟道材料和负电容效应的综合优势。最近的实验证明了二维材料 NCFET 具有出色的陡坡特性。因此，了解该特性的器件物理特性、性能预测以及基于常规 IV 族材料的 NCFET 的基准非常重要。在这篇文章中，我们进行的基于二硫化钼-d材料NCFETs的计算研究₂非平衡格林函数（NEGF）-Poisson自洽与自由吉布斯自由能计算方案判断在极化电场的运行路径下（ P-E) 关系。单层 MoS ₂ (1L-MoS ₂) 被选为通道材料，而各种厚度的超薄体硅 (UTB-Si) 被选为基准。结果表明，与 UTB-Si 对应物的 ~32 mV/dec 相比，1L-MoS ₂ NCFET具有 ~25 mV/dec 的出色平均亚阈值斜率 (SS) 。结果发现，在陡坡在1L-MOS设有_2个NCFETs可以归因于在1L-MOS的更优化的电容匹配₂ NCFETs和隧道电流在亚阈值区。