This article proposes a new approach for modeling self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The proposed approach utilizes two heat sources to model the effects of the relatively uniform heat generation when the device is in the linear regime and the concentrated heat generation in the high-field area after the device pinches off. Compared to traditional single heat source modeling approaches, the proposed approach yields a model that can accurately capture the bias dependence of the heat and temperature distribution in the GaN HEMT channel without resorting to the more resource-intensive electrothermal simulations. It also leads to a simple yet accurate analytical expression for the maximum channel temperature using thermal resistances that have clear geometric dependence.

中文翻译：

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使用两个热源模拟 GaN HEMT 中自热的偏差依赖性

本文提出了一种模拟氮化镓 (GaN) 高电子迁移率晶体管 (HEMT) 中自热的新方法。所提出的方法利用两个热源来模拟器件处于线性状态时相对均匀的发热和器件夹断后高场区域集中发热的影响。与传统的单热源建模方法相比，所提出的方法产生的模型可以准确捕获 GaN HEMT 通道中热量和温度分布的偏置依赖性，而无需求助于资源密集型的电热模拟。它还使用具有明显几何相关性的热阻得出简单而准确的最大通道温度分析表达式。