This article introduces an innovative approach that describes the drain–source current improvements of MOS transistors. It is based on the geometrical modification of MOSFET’s channel from a rectangular layout shape (RLS) into a diamond layout shape (DLS). In this way, the drain–source current enhancement is increased up to 11% for the DLS MOS transistors with an effective aspect ratio ( ${W}/\textit {L)}_{\mathrm {eff}}$ equal to 2.0 and an angle $\alpha $ set to 80°. Moreover, we present the comparison of 3-D TCAD simulations data, analytical model data based on Schwarz–Christoffel transformation (SCT), and measurement data given by measurement of the MOS transistors fabricated in the Bipolar-CMOS-DMOS (BCD) 160-nm technology process. For this purpose, there have been fabricated 1124 samples, which were proportionally divided into RLS MOSFETs and DLS MOSFETs with the angles $\alpha $ equal to 120°, 100°, and 80°. For all studied aspect ratios, the presented model has an excellent analytic description in comparison with the 3-D TCAD simulation results with an error lower than 3%. So, it proves the quality of the analytical model based on the SCT approach and it is the recommended approach to use also for modeling other MOSFET gate layout shapes.

中文翻译：

---

具有菱形布局形状的 160-nm BCD 技术工艺中 MOSFET 的电气性能

本文介绍了一种创新方法，描述了 MOS 晶体管的漏源电流改进。它基于 MOSFET 通道从矩形布局形状 (RLS) 到菱形布局形状 (DLS) 的几何修改。通过这种方式，对于具有有效纵横比的 DLS MOS 晶体管，漏源电流增强增加了 11%（ ${W}/\textit {L)}_{\mathrm {eff}}$ 等于 2.0 和一个角度 $\alpha $ 设置为 80°。此外，我们还比较了 3-D TCAD 模拟数据、基于 Schwarz-Christoffel 变换 (SCT) 的分析模型数据以及通过测量在双极-CMOS-DMOS (BCD) 160- 中制造的 MOS 晶体管给出的测量数据。纳米技术工艺。为此，已经制造了 1124 个样品，这些样品按比例分为 RLS MOSFET 和 DLS MOSFET，角度为 $\alpha $ 等于 120°、100° 和 80°。对于所有研究的纵横比，与 3-D TCAD 仿真结果相比，所提出的模型具有出色的分析描述，误差低于 3%。因此，它证明了基于 SCT 方法的分析模型的质量，并且它是推荐的方法，也用于对其他 MOSFET 栅极布局形状进行建模。