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Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {Vg, Vd} Bias Space: Implications and Peculiarities
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-08-01 , DOI: 10.1109/ted.2020.3000749
Markus Jech , Gunnar Rott , Hans Reisinger , Stanislav Tyaginov , Gerhard Rzepa , Alexander Grill , Dominic Jabs , Christoph Jungemann , Michael Waltl , Tibor Grasser

Characterizing mixed hot-carrier/bias temperature instability (BTI) degradation in full { $\textit {V}_{\text{G}}$ , $\textit {V}_{\text{D}}$ } bias space is a challenging task. Therefore, studies usually focus on individual degradation mechanisms, such as BTI and hot-carrier degradation (HCD). However, a simple superposition of these mechanisms at an arbitrary { $\textit {V}_{\text{G}}$ , $\textit {V}_{\text{D}}$ } combination often fails to predict the cumulative damage. We experimentally acquired a large data set covering the full bias space of a pMOSFET which allows us to obtain detailed degradation and recovery maps. Our models for describing oxide and interface defects provide physical insights into the underlying mechanisms and a possible interplay between the degradation modes. Additionally, we perform a dedicated experiment to reveal the implications of different stress regimes onto the various types of defects by switching BTI and HCD stress conditions. The results clearly reveal the conceptual limits of the assumption of independent degradation regimes.

中文翻译:

全 {Vg, Vd} 偏置空间中的混合热载流子/偏置温度不稳定性退化机制:含义和特殊性

表征混合热载流子/偏置温度不稳定性(BTI)完全退化{ $\textit {V}_{\text{G}}$ , $\textit {V}_{\text{D}}$ 偏置空间是一项具有挑战性的任务。因此,研究通常侧重于单个降解机制,例如 BTI 和热载流子降解 (HCD)。然而,这些机制在任意 { $\textit {V}_{\text{G}}$ , $\textit {V}_{\text{D}}$ } 组合经常无法预测累积损坏。我们通过实验获得了一个覆盖 pMOSFET 整个偏置空间的大数据集,这使我们能够获得详细的退化和恢复图。我们用于描述氧化物和界面缺陷的模型提供了对潜在机制和降解模式之间可能相互作用的物理见解。此外,我们进行了专门的实验,通过切换 BTI 和 HCD 应力条件来揭示不同应力状态对各种类型缺陷的影响。结果清楚地揭示了独立​​降解机制假设的概念限制。
更新日期:2020-08-01
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