当前位置: X-MOL 学术IEEE Trans. Elect. Dev. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Drift-Diffusion Simulation Scheme
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-08-01 , DOI: 10.1109/ted.2020.3001244
Nobuyuki Sano , Katsuhisa Yoshida , Kohei Tsukahara , Gyutae Park

We discuss the fundamental aspects of how discrete impurities could be physically modeled under the framework of the drift–diffusion (DD) simulations. The detailed physical interpretations of potential fluctuations, impurity-limited mobility, and an appropriate modeling to represent the discrete nature of impurities are explained. The present analyses are validated by DD simulations with various types of discrete impurity models. The traditional mobility model, which reproduces the experimental mobility at various impurity densities, could be used in our long-range discrete impurity model, whereas localized impurity models in which impurity charge is spatially localized at each impurity site induce unphysical polarization fields in semiconductor substrate and are unable to predict the correct mobility.

中文翻译:

与离散杂质相关的半导体器件建模的基本方面:漂移-扩散模拟方案

我们讨论了如何在漂移扩散 (DD) 模拟的框架下对离散杂质进行物理建模的基本方面。解释了潜在波动的详细物理解释、杂质限制的迁移率以及表示杂质离散性质的适当建模。目前的分析通过具有各种类型的离散杂质模型的 DD 模拟得到验证。传统的迁移率模型在各种杂质密度下再现实验迁移率,可用于我们的长程离散杂质模型,而局部杂质模型中,杂质电荷在空间上位于每个杂质位点,在半导体衬底中引起非物理极化场和无法预测正确的流动性。
更新日期:2020-08-01
down
wechat
bug