We demonstrate high-density (1- $\mu \text{m}$ pitch) silicon field-ionization arrays (FIAs) with self-aligned gate apertures (350 nm in diameter) and integrated nanowire current regulators. Our FIAs achieved high field factors (>0.1 nm−1) and significantly lower ionization voltages (<100 V) than the devices with lower tip densities previously reported. Ion currents were measured in argon, deuterium, and helium at pressures from 1 to 16 mTorr. The FIAs turned on between 70 and 85 V, and the ion currents of around 0.4 nA were measured at 100 V. Higher currents of 7 nA were obtained at 147 V and 16 mTorr, but with the risk of gate damage by the ions energized in the intense gate-ionizer field. Si FIAs coated with Pt resulted in higher field factors due to sharper tips, but lower ion currents. Surface states, coupled with molecular adsorption and transport to the ionizer, are the possible mechanisms for lower voltage ionization in the uncoated Si FIAs.

中文翻译：

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纳米制造的低压门控硅场电离阵列

我们展示了具有自对准栅极孔径（直径 350 nm）和集成纳米线电流调节器的高密度（1-$\mu\text{m}$ 间距）硅场电离阵列（FIA）。与之前报道的尖端密度较低的器件相比，我们的 FIA 实现了高场因数 (>0.1 nm-1) 和显着更低的电离电压 (<100 V)。在 1 至 16 mTorr 的压力下，在氩气、氘气和氦气中测量离子电流。FIA 在 70 到 85 V 之间开启，在 100 V 下测得的离子电流约为 0.4 nA。在 147 V 和 16 mTorr 下获得了 7 nA 的更高电流，但存在被激发的离子损坏栅极的风险强烈的栅极电离场。由于尖端更锋利，但离子电流较低，因此涂有 Pt 的 Si FIA 导致更高的场因子。表面状态，