Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy (MBE). Electron Backscatter Diffraction (EBSD) confirmed the single crystalline structure of the Al films. The growth direction is [110], and the Al lattice is rotated 45$^\circ$ relative to substrate to match the ZnSe (100) lattice constant. The as-grown Al-ZnSe contact exhibited nearly ideal electrical characteristics over a large doping range of n-ZnSe without any additional treatment. The contact resistances are in a range of 10$^{-3}$ $\Omega$-cm$^{2}$ for even lightly doped ZnSe ($\sim$10$^{17}$ cm$^{-3}$). Leaky Schottky behavior in lightly doped ZnSe samples suggested Al-ZnSe formed a low barrier height, Schottky limit contact. In-situ grown Al could act as a simple metal contact to n-ZnSe regardless of carrier concentration with lower resistance compared to other reported contacts in literatures. The reported novel metallization method could greatly simplify the ZnSe-based device fabrication complexity as well as lower the cost

中文翻译：

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通过分子束外延原位生长的单晶铝作为与 n-ZnSe 的非合金欧姆接触

使用通过分子束外延 (MBE) 在外延生长的 ZnSe (100) 上沉积的单晶 Al 薄膜证明了与 n-ZnSe 的新型欧姆接触。电子背散射衍射 (EBSD) 证实了铝膜的单晶结构。生长方向为[110]，Al晶格相对于衬底旋转45$^\circ$以匹配ZnSe（100）晶格常数。在没有任何额外处理的情况下，生长的 Al-ZnSe 触点在 n-ZnSe 的大掺杂范围内表现出近乎理想的电气特性。接触电阻在 10$^{-3}$ $\Omega$-cm$^{2}$ 的范围内，即使是轻掺杂的 ZnSe ($\sim$10$^{17}$ cm$^{-3 }$）。轻掺杂 ZnSe 样品中的泄漏肖特基行为表明 Al-ZnSe 形成了低势垒高度，肖特基极限接触。与文献中报道的其他接触相比，原位生长的 Al 可以作为与 n-ZnSe 的简单金属接触，而不管载流子浓度如何，电阻较低。报道的新型金属化方法可以大大简化基于 ZnSe 的器件制造复杂性并降低成本