Visible light and secondary ions emitted from various sample surfaces (Si, HOPG, Cu, and Teflon) were observed after irradiation with highly charged ions (HCIs). HCIs were produced using an electron beam ion source (Kobe EBIS) at Kobe University. Visible emissions were detected using a liquid nitrogen cooled CCD detector. The mass spectrum of secondary ions was obtained using a quadrupole mass analyzer. The major constituent in both light and secondary ion emissions was hydrogen. Balmer lines were the dominant form of light emission as observed from spectra, and proton signals were the most intense peaks in SIMS spectra. The emission intensity of Balmer light and the proton signal intensity (as observed from the SIMS spectrum) both increased as the charge state of the incident HCI increased. Both intensities were roughly proportional to the third to fourth power of the charge state. Spatial distribution of Balmer light was measured and the kinetic energy of hydrogen sputtered from the surface was estimated to be ∼20 eV. The SIMS measurement results for the Teflon sample demonstrate the advantage of using SIMS with an HCI probe for detecting electronegative elements.

中文翻译：

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观察被高电荷离子照射的表面的光和二次离子发射

在用高电荷离子 (HCl) 照射后，观察到从各种样品表面（Si、HOPG、Cu 和 Teflon）发出的可见光和二次离子。使用神户大学的电子束离子源 (Kobe EBIS) 生产 HCI。使用液氮冷却 CCD 检测器检测可见发射。使用四极杆质量分析器获得次级离子的质谱。光和二次离子发射的主要成分是氢。巴尔默线是从光谱中观察到的主要发光形式，质子信号是 SIMS 光谱中最强烈的峰。Balmer 光的发射强度和质子信号强度（从 SIMS 光谱中观察到）都随着入射 HCl 的电荷状态增加而增加。两种强度大致与电荷态的三次方至四次方成正比。测量了巴尔默光的空间分布，估计从表面溅射的氢的动能约为 20 eV。Teflon 样品的 SIMS 测量结果证明了使用 SIMS 和 HCI 探针检测带负电元素的优势。