当前位置: X-MOL 学术ACS Mater. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Memory Devices Based on Van der Waals Heterostructures
ACS Materials Letters ( IF 11.4 ) Pub Date : 2020-07-23 , DOI: 10.1021/acsmaterialslett.0c00227
Chunsen Liu 1, 2 , Peng Zhou 1
Affiliation  

With a rapid increase in artificial intelligence applications, massive data need to be processed in parallel and the performance of memories becomes the key factor that limits the efficiency of the whole system. High-performance memories that match the high-speed computing cell is needed, and architecture innovation is also urgent to solve the data transfer bottleneck of von Neumann architecture. Constructed by layered two-dimensional (2D) materials, van der Waals (vdW) heterostructures can be easily stacked and own diverse physical properties and band structures that provide a large space for the memory devices design. In this Perspective, we offer a perspective on the field of vdW heterostructures memory devices, including the device performance enhancement, the mechanism innovation, and the rich application scenarios.

中文翻译:

基于范德华异质结构的存储器件

随着人工智能应用的快速增长,需要并行处理海量数据,而存储器的性能则成为限制整个系统效率的关键因素。需要与高速计算单元相匹配的高性能存储器,并且架构创新也迫切需要解决冯·诺依曼架构的数据传输瓶颈。范德华(vdW)异质结构由分层的二维(2D)材料构成,可以轻松堆叠,并具有多种物理特性和能带结构,为存储设备设计提供了广阔的空间。在此观点中,我们提供了关于vdW异质结构存储设备领域的观点,包括设备性能增强,机制创新以及丰富的应用场景。
更新日期:2020-09-08
down
wechat
bug