Abstract With the development of electronic information technology, the fabrication of transistors based on bulk (3D) semiconductor materials has encountered bottlenecks. In view of this situation, many researchers have focused on manufacturing two-dimensional nanostructures from one-dimensional nanomaterials to apply to transistors. Based on the experimental platform of femtosecond pulsed laser irradiation system, one-dimensional single-walled carbon nanotubes (SWCNTs) deposited on silica substrate were induced to interconnect, and the optimal process parameters of the interconnection were explored. Then compared with randomly distributed SWCNTs films, the square resistance of SWCNTs films after interconnection was significantly reduced, which provided inspiration for the subsequent preparation of high-performance carbon-based thin film transistors.

中文翻译：

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飞秒脉冲激光诱导单壁碳纳米管互连

摘要 随着电子信息技术的发展，基于块体（3D）半导体材料的晶体管的制造遇到了瓶颈。针对这种情况，许多研究人员将注意力集中在由一维纳米材料制造二维纳米结构以应用于晶体管。基于飞秒脉冲激光辐照系统实验平台，诱导沉积在二氧化硅衬底上的一维单壁碳纳米管（SWCNTs）互连，并探索互连的最佳工艺参数。那么与随机分布的单壁碳纳米管薄膜相比，互连后单壁碳纳米管薄膜的方电阻显着降低，