Abstract A new design of carbon source using a S-shaped glassy carbon filament for p-doping and carbon deposition is presented. Due to the higher resistivity of the glassy carbon, lower current is needed to produce the same flux as in a source based on pyrolytic graphite filament. The source design is very compact and the use of water cooling is not mandatory. The results and simulations of the new design show a higher flux than the previously reported glassy carbon based source while avoiding hot spots that can cause an early filament degradation. Hole mobility vs doping level relation data on p-doped GaAs layers grown by molecular beam epitaxy using this new carbon source are shown. With this new C source GaAs (001) surface morphology flatness is preserved after depositing C, showing a reduced substrate heating radiation essential for operate in III-V solid source molecular beam epitaxy (MBE) systems.

中文翻译：

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用于 MBE 生长的碳蒸发器单元的优化

摘要 提出了一种使用 S 形玻璃碳丝进行 p 掺杂和碳沉积的碳源的新设计。由于玻璃碳的电阻率较高，因此需要较低的电流来产生与基于热解石墨丝的源相同的通量。源设计非常紧凑，不强制使用水冷。新设计的结果和模拟显示，比之前报道的基于玻璃碳的源具有更高的通量，同时避免了可能导致灯丝过早退化的热点。显示了使用这种新碳源通过分子束外延生长的 p 掺杂 GaAs 层的空穴迁移率与掺杂水平关系数据。使用这种新的 C 源 GaAs (001) 表面形态平坦度在沉积 C 后得以保持，