A step-like conductance as a function of the Fermi energy is theoretically predicted for a junction made of silicene, in which the energy gap in the junction can be controlled by a perpendicular electric field. When the electric field is applied at the central area of the junction, the transmission probability of an electron becomes partially suppressed and the calculated conductance behaves a step-like function of the Fermi energy. Origins of the step-like conductance are (1) formation of a standing-wave of electron, (2) changing number of transport channel, and (3) a rotation of out-of-plane pseudospin of the electron in silicene. We analytically show that the transmission probability of the electron through the junction depends on the direction of the pseudospin, in which the large rotation results in vanishing conductance. When we switch-off the electric field, on the other hand, the pseudospin does not change the direction, which gives a finite conductance. Thus a switching device can be realized in the silicene pseudospin junction.

中文翻译：

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硅烯赝自旋结的阶梯状电导

对于由硅烯制成的结，理论上预测了作为费米能量函数的阶梯状电导，其中结中的能隙可以通过垂直电场控制。当在结的中心区域施加电场时，电子的传输概率会被部分抑制，并且计算出的电导表现为费米能量的阶跃函数。阶梯状电导的起源是（1）电子驻波的形成，（2）传输通道数量的变化，以及（3）硅烯中电子的平面外赝自旋旋转。我们分析表明，电子通过结的传输概率取决于赝自旋的方向，其中大旋转导致电导消失。另一方面，当我们关闭电场时，赝自旋不会改变方向，这给出了有限的电导。因此，可以在硅烯赝自旋结中实现开关器件。