In this study, key process technologies, such as epitaxy growth, fin structure etching, and selective etching of stacked Si/SiGe multilayer for the fabrication of double Si 0.7 Ge 0.3 channel nanowires under a reasonable thermal budget are systematically investigated. A high crystal quality two-period Si 0.7 Ge 0.3 /Si stacked multilayer epitaxially grown with thin and distinct interfaces is first realized on a Si substrate. A vertical profile of the fin structure of Si 0.7 Ge 0.3 /Si stacked multilayer is achieved using HBr/O 2 /He plasma after fine-tuning the etching process. In addition, the highest tolerable temperature of 850 °C for the Si 0.7 Ge 0.3 /Si stacked multilayer under rapid thermal annealing is confirmed based on the crystal quality, Si 0.7 Ge 0.3 /Si interface, and Ge diffusion. Moreover, a rectangular Si 0.7 Ge 0.3 extremity profile is realized...

中文翻译：

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堆叠式双Si 0.7 Ge 0.3通道纳米线制造的关键工艺技术

在这项研究中，系统地研究了关键工艺技术，例如外延生长，鳍结构蚀刻以及在合理的热预算下制造双Si 0.7 Ge 0.3通道纳米线的堆叠Si / SiGe多层的选择性蚀刻。首先在Si衬底上实现外延生长具有薄且不同界面的高质量晶体质量的两周期Si 0.7 Ge 0.3 / Si堆叠多层。在微调蚀刻工艺之后，使用HBr / O 2 / He等离子体获得Si 0.7 Ge 0.3 / Si叠层多层结构的鳍结构的垂直轮廓。另外，基于晶体质量，Si 0.7 Ge 0.3 / Si界面和Ge扩散，确认了在快速热退火下Si 0.7 Ge 0.3 / Si层叠的多层的最高容许温度为850℃。另外，为矩形的Si 0.7 Ge 0。