Arrays of silicon nanowires (SiNWs) with characteristic transverse nanowire size of the order of 100 nm were fabricated by metal‐assisted chemical etching of monocrystalline silicon wafers followed by thermo‐diffusional doping with boron and studied by means of Raman spectroscopy considering the Fano effect related to the free charge carriers (holes) in SiNWs. The hole concentration of the order of 10²⁰ cm⁻³ was shown to be achieved for SiNWs annealed at 950–1000°C and the peak intensity of Raman scattering of SiNWs dropped exponentially with the increasing free‐hole concentration. The obtained results can be used for the express diagnostics of the electrical properties of silicon nanostructures for applications in optoelectronics, sensorics, and thermoelectric devices.

中文翻译：

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退火温度对拉曼光谱探测的硅纳米线阵列热扩散硼掺杂的影响

通过对单晶硅晶片进行金属辅助化学刻蚀，然后对硼进行热扩散掺杂，制造了具有特征横向纳米线尺寸约为100 nm的硅纳米线（SiNWs）阵列，并通过考虑了Fano效应的拉曼光谱法进行了研究到SiNW中的自由电荷载流子（孔）。的10的顺序中的空穴浓度²⁰厘米^-3显示出在950退火硅纳米线来实现-随着自由孔浓度的增加，SiNWs的1000°C和拉曼散射的峰值强度呈指数下降。获得的结果可用于对光电子，传感和热电设备中应用的硅纳米结构的电学特性进行明确的诊断。